IRF840S Transistor — Specifications & Equivalents
IRF840S Transistor Datasheet, IRF840S Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 125 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 500 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage | 4 V |
| |Id| ⓘ - Maximum Drain Current | 8 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 310 pF |
| Package | TO263 |
| Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current | 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val |
| INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor IRF840 FEATURES Drain Current ID=8.0A@ TC=25 Drain Source Voltage- | VDSS= 500V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.85(Max) DESCRITION Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid an |
| isc N-Channel Mosfet Transistor IRF840AFEATURESDrain Source Voltage- | V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM |