IRF830AS MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by International Rectifier (now Infineon)
About the IRF830AS
The IRF830AS is an N-channel MOSFET with a drain–source voltage (VDS) rating of 500 V, a continuous drain current (ID) of 5 A and an on-resistance (RDS(on)) of 1.4 Ω. It can dissipate up to 74 W and is rated to a junction temperature of 150 °C. It is supplied in the TO263 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 500 V
- Max continuous drain current (ID): 5 A
- On-resistance (RDS(on)): 1.4 Ω
- Gate threshold (VGS(th)): 4.5 V
- Power dissipation (PD): 74 W
- Max junction temperature (TJ): 150 °C
- Package: TO263
- Manufacturer: Commonly produced by International Rectifier (now Infineon)
Typical applications
With its 500 V drain–source rating the IRF830AS sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
On-resistance of 1.4 Ω is relatively high, so this part is better suited to low duty-cycle or low-current switching than to continuous high-current conduction.
Gate drive and switching notes
With a gate threshold (VGS(th)) of 4.5 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking VGS to 10 V.
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Total gate charge (Qg) of 24 nC sets the drive current required: average gate current is roughly Qg × switching frequency, so faster switching needs a stronger driver.
Switching behaviour is characterised by a rise time of 21 ns and an output capacitance (Coss) of 93 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the IRF830AS
A drop-in substitute for the IRF830AS must be the same N-channel type and offer a drain–source rating of at least 500 V, a continuous drain current rating of at least 5 A, an on-resistance no higher than 1.4 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.
Mechanically, check the replacement against the TO263 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the IRF830AS?
The IRF830AS is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 500 V drain-source and 5 A continuous drain current.
What is the maximum voltage of the IRF830AS?
The IRF830AS has a maximum drain-source voltage (Vds) of 500 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the IRF830AS handle?
It is rated for 5 A of continuous drain current, with power dissipation limited to 74 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the IRF830AS?
On-resistance (Rds(on)) is 1.4 Ω. Multiply by the square of your load current to estimate conduction loss.
Is the IRF830AS logic-level compatible?
No. The gate threshold is 4.5 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.
What package does the IRF830AS come in?
It is listed in TO263. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the IRF830AS?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 500 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Gate Threshold Voltage (Vgsth) | 4.5 V |
| Drain Current (Id) | 5 A |
| Drain-Source On-Resistance (Rds) | 1.4 |
| Total Gate Charge (Qg) | 24 |
| Rise Time (tr) | 21 nS |
| Output Capacitance (Coss) | 93 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO263 |
| Power Dissipation (Pd) | 74 W |
Equivalent & Replacement Parts
No verified equivalents are listed for IRF830AS yet.