IRF830AS MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF830AS

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)500 V
Gate-Source Voltage (Vgs)30 V
Gate Threshold Voltage (Vgsth)4.5 V
Drain Current (Id)5 A
Drain-Source On-Resistance (Rds)1.4
Total Gate Charge (Qg)24
Rise Time (tr)21 nS
Output Capacitance (Coss)93 pF
Junction Temperature (Tj)150 °C
PackageTO263
Power Dissipation (Pd)74 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF830AS yet.

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