IRF820S MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF820S

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)500 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)2.5 A
Drain-Source On-Resistance (Rds)3
Rise Time (tr)8.6 nS
Output Capacitance (Coss)92 pF
Junction Temperature (Tj)150 °C
PackageTO263
Power Dissipation (Pd)50 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF820S yet.

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