IRF820S MOSFET — Specifications & Equivalents
MOSFET N -Channel - IRF820S
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 500 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 2.5 A |
| Drain-Source On-Resistance (Rds) | 3 |
| Rise Time (tr) | 8.6 nS |
| Output Capacitance (Coss) | 92 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO263 |
| Power Dissipation (Pd) | 50 W |
Equivalent & Replacement Parts
No verified equivalents are listed for IRF820S yet.