IRF820FI MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF820FI

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)500 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)2 A
Drain-Source On-Resistance (Rds)3
Rise Time (tr)50
Output Capacitance (Coss)150
Junction Temperature (Tj)150 °C
PackageISOWATT220
Power Dissipation (Pd)30 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF820FI yet.

Browse all electronic components