IRF7406 MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by International Rectifier (now Infineon)
About the IRF7406
The IRF7406 is a P-channel MOSFET with a drain–source voltage (VDS) rating of 30 V, a continuous drain current (ID) of 5.8 A and an on-resistance (RDS(on)) of 0.045 Ω. It can dissipate up to 2.5 W and is rated to a junction temperature of 150 °C. It is supplied in the SO8 package.
At a glance
- Type: P-channel MOSFET
- Max drain–source voltage (VDS): 30 V
- Max continuous drain current (ID): 5.8 A
- On-resistance (RDS(on)): 0.045 Ω
- Power dissipation (PD): 2.5 W
- Max junction temperature (TJ): 150 °C
- Package: SO8
- Manufacturer: Commonly produced by International Rectifier (now Infineon)
Typical applications
With its 30 V drain–source rating the IRF7406 sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.
The low 0.045 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Total gate charge (Qg) of 59 nC sets the drive current required: average gate current is roughly Qg × switching frequency, so faster switching needs a stronger driver.
Switching behaviour is characterised by a rise time of 33 ns and an output capacitance (Coss) of 490 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the IRF7406
A drop-in substitute for the IRF7406 must be the same P-channel type and offer a drain–source rating of at least 30 V, a continuous drain current rating of at least 5.8 A and an on-resistance no higher than 0.045 Ω if efficiency and heat matter.
Mechanically, check the replacement against the SO8 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the IRF7406?
The IRF7406 is a P-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 5.8 A continuous drain current.
What is the maximum voltage of the IRF7406?
The IRF7406 has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the IRF7406 handle?
It is rated for 5.8 A of continuous drain current, with power dissipation limited to 2.5 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the IRF7406?
On-resistance (Rds(on)) is 0.045 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the IRF7406 come in?
It is listed in SO8. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the IRF7406?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | P -Channel |
| Drain-Source Voltage (Vds) | 30 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 5.8 A |
| Drain-Source On-Resistance (Rds) | 0.045 |
| Total Gate Charge (Qg) | 59 |
| Rise Time (tr) | 33 nS |
| Output Capacitance (Coss) | 490 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | SO8 |
| Power Dissipation (Pd) | 2.5 W |
Equivalent & Replacement Parts
No verified equivalents are listed for IRF7406 yet.