IRF7401 MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by International Rectifier (now Infineon)
About the IRF7401
The IRF7401 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 20 V, a continuous drain current (ID) of 8.7 A and an on-resistance (RDS(on)) of 0.022 Ω. It can dissipate up to 2.5 W and is rated to a junction temperature of 150 °C. It is supplied in the SO8 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 20 V
- Max continuous drain current (ID): 8.7 A
- On-resistance (RDS(on)): 0.022 Ω
- Power dissipation (PD): 2.5 W
- Max junction temperature (TJ): 150 °C
- Package: SO8
- Manufacturer: Commonly produced by International Rectifier (now Infineon)
Typical applications
With its 20 V drain–source rating the IRF7401 sits in the very-low-voltage class of switching MOSFETs, typically found in battery protection and power-path switching, point-of-load converters and logic-level load switching in portable devices.
The low 0.022 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±12 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Total gate charge (Qg) of 48 nC sets the drive current required: average gate current is roughly Qg × switching frequency, so faster switching needs a stronger driver.
Switching behaviour is characterised by a rise time of 72 ns and an output capacitance (Coss) of 690 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the IRF7401
A drop-in substitute for the IRF7401 must be the same N-channel type and offer a drain–source rating of at least 20 V, a continuous drain current rating of at least 8.7 A and an on-resistance no higher than 0.022 Ω if efficiency and heat matter.
Mechanically, check the replacement against the SO8 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the IRF7401?
The IRF7401 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 20 V drain-source and 8.7 A continuous drain current.
What is the maximum voltage of the IRF7401?
The IRF7401 has a maximum drain-source voltage (Vds) of 20 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the IRF7401 handle?
It is rated for 8.7 A of continuous drain current, with power dissipation limited to 2.5 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the IRF7401?
On-resistance (Rds(on)) is 0.022 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the IRF7401 come in?
It is listed in SO8. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the IRF7401?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 20 V |
| Gate-Source Voltage (Vgs) | 12 V |
| Drain Current (Id) | 8.7 A |
| Drain-Source On-Resistance (Rds) | 0.022 |
| Total Gate Charge (Qg) | 48 |
| Rise Time (tr) | 72 nS |
| Output Capacitance (Coss) | 690 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | SO8 |
| Power Dissipation (Pd) | 2.5 W |
Equivalent & Replacement Parts
No verified equivalents are listed for IRF7401 yet.