IRF6609 MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF6609

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)20 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)31 A
Drain-Source On-Resistance (Rds)0.002
Rise Time (tr)95 nS
Output Capacitance (Coss)1850 pF
Junction Temperature (Tj)150 °C
PackageDIRECTFET
Power Dissipation (Pd)2.8 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF6609 yet.

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