IRF6607 MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF6607

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)30 V
Gate-Source Voltage (Vgs)12 V
Drain Current (Id)27 A
Drain-Source On-Resistance (Rds)0.0033
Rise Time (tr)8 nS
Output Capacitance (Coss)1260 pF
Junction Temperature (Tj)150 °C
PackageDIRECTFET
Power Dissipation (Pd)3.6 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF6607 yet.

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