Question 1

What is IRF640N?

Accepted Answer

MOSFET N -Channel - IRF640N

Question 2

What are the specifications of IRF640N?

Accepted Answer

Key specifications include: Type: MOSFET, Channel Type: N -Channel, Drain-Source Voltage (Vds): 200 V, Gate-Source Voltage (Vgs): 20 V, Gate Threshold Voltage (Vgsth): 4 V, Drain Current (Id): 18 A, Drain-Source On-Resistance (Rds): 0.15, Total Gate Charge (Qg): 67 nC, Rise Time (tr): 19 nS, Output Capacitance (Coss): 185 pF, Junction Temperature (Tj): 175 °C, Package: TO220AB, Power Dissipation (Pd): 150 W

Question 3

What are equivalent components to IRF640N?

Accepted Answer

See the component details for equivalent parts.

IRF640N MOSFET — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Type	MOSFET
Channel Type	N -Channel
Drain-Source Voltage (Vds)	200 V
Gate-Source Voltage (Vgs)	20 V
Gate Threshold Voltage (Vgsth)	4 V
Drain Current (Id)	18 A
Drain-Source On-Resistance (Rds)	0.15
Total Gate Charge (Qg)	67 nC
Rise Time (tr)	19 nS
Output Capacitance (Coss)	185 pF
Junction Temperature (Tj)	175 °C
Package	TO220AB
Power Dissipation (Pd)	150 W