IRF636A MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF636A

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)275 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)8.1 A
Drain-Source On-Resistance (Rds)0.5
Rise Time (tr)14 nS
Output Capacitance (Coss)110 pF
Junction Temperature (Tj)150 °C
PackageTO220
Power Dissipation (Pd)74 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF636A yet.

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