IRF630S MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF630S

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)200 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)9 A
Drain-Source On-Resistance (Rds)0.4
Rise Time (tr)15 nS
Output Capacitance (Coss)90 pF
Junction Temperature (Tj)150 °C
PackageTO263
Power Dissipation (Pd)70 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF630S yet.

Browse all electronic components