IRF630 MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF630

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)200 V
Gate-Source Voltage (Vgs)20 V
Gate Threshold Voltage (Vgsth)4 V
Drain Current (Id)9 A
Drain-Source On-Resistance (Rds)0.4
Total Gate Charge (Qg)31 nC
Rise Time (tr)15 nS
Output Capacitance (Coss)90 pF
Junction Temperature (Tj)150 °C
PackageTO220
Power Dissipation (Pd)75 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF630 yet.

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