IRF5802 MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF5802

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)150 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)0.9 A
Drain-Source On-Resistance (Rds)1.2
Rise Time (tr)1.6 nS
Output Capacitance (Coss)26 pF
Junction Temperature (Tj)150 °C
PackageTSOP6
Power Dissipation (Pd)2 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF5802 yet.

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