IRF5802 MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by International Rectifier (now Infineon)
About the IRF5802
The IRF5802 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 150 V, a continuous drain current (ID) of 0.9 A and an on-resistance (RDS(on)) of 1.2 Ω. It can dissipate up to 2 W and is rated to a junction temperature of 150 °C. It is supplied in the TSOP6 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 150 V
- Max continuous drain current (ID): 0.9 A
- On-resistance (RDS(on)): 1.2 Ω
- Power dissipation (PD): 2 W
- Max junction temperature (TJ): 150 °C
- Package: TSOP6
- Manufacturer: Commonly produced by International Rectifier (now Infineon)
Typical applications
With its 150 V drain–source rating the IRF5802 sits in the medium-voltage class of switching MOSFETs, typically found in 48 V and 96 V distribution systems, solar and telecom power stages, DC motor drives and intermediate-bus DC-DC converters.
At 0.9 A it is aimed at small-signal and light-load switching rather than power conversion.
On-resistance of 1.2 Ω is relatively high, so this part is better suited to low duty-cycle or low-current switching than to continuous high-current conduction.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 1.6 ns and an output capacitance (Coss) of 26 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the IRF5802
A drop-in substitute for the IRF5802 must be the same N-channel type and offer a drain–source rating of at least 150 V, a continuous drain current rating of at least 0.9 A and an on-resistance no higher than 1.2 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TSOP6 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the IRF5802?
The IRF5802 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 150 V drain-source and 0.9 A continuous drain current.
What is the maximum voltage of the IRF5802?
The IRF5802 has a maximum drain-source voltage (Vds) of 150 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the IRF5802 handle?
It is rated for 0.9 A of continuous drain current, with power dissipation limited to 2 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the IRF5802?
On-resistance (Rds(on)) is 1.2 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the IRF5802 come in?
It is listed in TSOP6. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the IRF5802?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 150 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 0.9 A |
| Drain-Source On-Resistance (Rds) | 1.2 |
| Rise Time (tr) | 1.6 nS |
| Output Capacitance (Coss) | 26 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TSOP6 |
| Power Dissipation (Pd) | 2 W |
Equivalent & Replacement Parts
No verified equivalents are listed for IRF5802 yet.