IRF5305S MOSFET — Specifications & Equivalents

MOSFET P -Channel - IRF5305S

Key Specifications

TypeMOSFET
Channel TypeP -Channel
Drain-Source Voltage (Vds)55 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)31 A
Drain-Source On-Resistance (Rds)0.06
Rise Time (tr)66 nS
Output Capacitance (Coss)520 pF
Junction Temperature (Tj)175 °C
PackageTO263
Power Dissipation (Pd)110 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF5305S yet.

Browse all electronic components