IRF5210 MOSFET — Specifications & Equivalents

MOSFET P -Channel - IRF5210

Key Specifications

TypeMOSFET
Channel TypeP -Channel
Drain-Source Voltage (Vds)100 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)40 A
Drain-Source On-Resistance (Rds)0.06
Rise Time (tr)86 nS
Output Capacitance (Coss)790 pF
Junction Temperature (Tj)175 °C
PackageTO220AB
Power Dissipation (Pd)200 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF5210 yet.

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