IRF510S MOSFET — Specifications & Equivalents
MOSFET N -Channel - IRF510S
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 100 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 5.6 A |
| Drain-Source On-Resistance (Rds) | 0.54 |
| Rise Time (tr) | 16 nS |
| Output Capacitance (Coss) | 81 pF |
| Junction Temperature (Tj) | 175 °C |
| Package | TO263 |
| Power Dissipation (Pd) | 43 W |
Equivalent & Replacement Parts
No verified equivalents are listed for IRF510S yet.