IRF2907ZS-7P MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by International Rectifier (now Infineon)
About the IRF2907ZS-7P
The IRF2907ZS-7P is an N-channel MOSFET with a drain–source voltage (VDS) rating of 75 V, a continuous drain current (ID) of 160 A and an on-resistance (RDS(on)) of 3.8 mΩ. It is available in D2-PAK and 7-LEAD packages, so confirm the pinout of the exact variant you order.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 75 V
- Max continuous drain current (ID): 160 A
- On-resistance (RDS(on)): 3.8 mΩ
- Package: D2-PAK, 7-LEAD
- Manufacturer: Commonly produced by International Rectifier (now Infineon)
Typical applications
With its 75 V drain–source rating the IRF2907ZS-7P sits in the mid-range class of switching MOSFETs, typically found in 24 V and 48 V industrial and battery systems, motor drives and H-bridges and load and hot-swap switching.
The 160 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
On-resistance of 3.8 mΩ is relatively high, so this part is better suited to low duty-cycle or low-current switching than to continuous high-current conduction.
Gate drive and switching notes
Keep gate–source voltage within the ±±20V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Total gate charge (Qg) of 170 nC sets the drive current required: average gate current is roughly Qg × switching frequency, so faster switching needs a stronger driver.
Choosing a replacement for the IRF2907ZS-7P
A drop-in substitute for the IRF2907ZS-7P must be the same N-channel type and offer a drain–source rating of at least 75 V, a continuous drain current rating of at least 160 A and an on-resistance no higher than 3.8 mΩ if efficiency and heat matter.
Mechanically, check the replacement against the D2-PAK and 7-LEAD footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the IRF2907ZS-7P?
The IRF2907ZS-7P is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 75 V drain-source and 160 A continuous drain current.
What is the maximum voltage of the IRF2907ZS-7P?
The IRF2907ZS-7P has a maximum drain-source voltage (Vds) of 75 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the IRF2907ZS-7P handle?
It is rated for 160 A of continuous drain current. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the IRF2907ZS-7P?
On-resistance (Rds(on)) is 3.8 mΩ. Multiply by the square of your load current to estimate conduction loss.
What package does the IRF2907ZS-7P come in?
It is listed in D2-PAK and 7-LEAD. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the IRF2907ZS-7P?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | n-channel |
|---|---|
| Drain-to-Source Breakdown Voltage | 75V |
| Gate-to-Source Voltage, max | ±20V |
| Drain-Source On-State Resistance, max | 3.8mΩ |
| Continuous Drain Current | 160A |
| Total Gate Charge | 170nC |
| Power Dissipation | 300W |
| Package | D2-PAK 7-LEAD |
Equivalent & Replacement Parts
No verified equivalents are listed for IRF2907ZS-7P yet.