IRF1324S-7P MOSFET — Specifications & Equivalents

Manufacturer: Commonly produced by International Rectifier (now Infineon)

About the IRF1324S-7P

The IRF1324S-7P is an N-channel MOSFET with a drain–source voltage (VDS) rating of 24 V, a continuous drain current (ID) of 429 A and an on-resistance (RDS(on)) of 1 mΩ. It is available in D2-PAK and 7-LEAD packages, so confirm the pinout of the exact variant you order.

At a glance

  • Type: N-channel MOSFET
  • Max drain–source voltage (VDS): 24 V
  • Max continuous drain current (ID): 429 A
  • On-resistance (RDS(on)): 1 mΩ
  • Package: D2-PAK, 7-LEAD
  • Manufacturer: Commonly produced by International Rectifier (now Infineon)

Typical applications

With its 24 V drain–source rating the IRF1324S-7P sits in the very-low-voltage class of switching MOSFETs, typically found in battery protection and power-path switching, point-of-load converters and logic-level load switching in portable devices.

The 429 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.

On-resistance of 1 mΩ is relatively high, so this part is better suited to low duty-cycle or low-current switching than to continuous high-current conduction.

Gate drive and switching notes

Keep gate–source voltage within the ±±20V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Total gate charge (Qg) of 180 nC sets the drive current required: average gate current is roughly Qg × switching frequency, so faster switching needs a stronger driver.

Choosing a replacement for the IRF1324S-7P

A drop-in substitute for the IRF1324S-7P must be the same N-channel type and offer a drain–source rating of at least 24 V, a continuous drain current rating of at least 429 A and an on-resistance no higher than 1 mΩ if efficiency and heat matter.

Mechanically, check the replacement against the D2-PAK and 7-LEAD footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the IRF1324S-7P?

The IRF1324S-7P is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 24 V drain-source and 429 A continuous drain current.

What is the maximum voltage of the IRF1324S-7P?

The IRF1324S-7P has a maximum drain-source voltage (Vds) of 24 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the IRF1324S-7P handle?

It is rated for 429 A of continuous drain current. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the IRF1324S-7P?

On-resistance (Rds(on)) is 1 mΩ. Multiply by the square of your load current to estimate conduction loss.

What package does the IRF1324S-7P come in?

It is listed in D2-PAK and 7-LEAD. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the IRF1324S-7P?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.

Key Specifications

Typen-channel
Drain-to-Source Breakdown Voltage24V
Gate-to-Source Voltage, max±20V
Drain-Source On-State Resistance, max1mΩ
Continuous Drain Current429A
Total Gate Charge180nC
Power Dissipation300W
PackageD2-PAK 7-LEAD

Equivalent & Replacement Parts

No verified equivalents are listed for IRF1324S-7P yet.

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