IRF1310NS MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF1310NS

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)100 V
Gate-Source Voltage (Vgs)20 V
Gate Threshold Voltage (Vgsth)4 V
Drain Current (Id)42 A
Drain-Source On-Resistance (Rds)0.036
Total Gate Charge (Qg)110
Rise Time (tr)56 nS
Output Capacitance (Coss)450 pF
Junction Temperature (Tj)175 °C
PackageTO263
Power Dissipation (Pd)160 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF1310NS yet.

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