IRF1310NS MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by International Rectifier (now Infineon)
About the IRF1310NS
The IRF1310NS is an N-channel MOSFET with a drain–source voltage (VDS) rating of 100 V, a continuous drain current (ID) of 42 A and an on-resistance (RDS(on)) of 0.036 Ω. It can dissipate up to 160 W and is rated to a junction temperature of 175 °C. It is supplied in the TO263 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 100 V
- Max continuous drain current (ID): 42 A
- On-resistance (RDS(on)): 0.036 Ω
- Gate threshold (VGS(th)): 4 V
- Power dissipation (PD): 160 W
- Max junction temperature (TJ): 175 °C
- Package: TO263
- Manufacturer: Commonly produced by International Rectifier (now Infineon)
Typical applications
With its 100 V drain–source rating the IRF1310NS sits in the medium-voltage class of switching MOSFETs, typically found in 48 V and 96 V distribution systems, solar and telecom power stages, DC motor drives and intermediate-bus DC-DC converters.
The low 0.036 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
With a gate threshold (VGS(th)) of 4 V this is not a logic-level device: driving the gate directly from a 3.3 V or 5 V microcontroller pin will leave it only partly on and cause it to overheat. Use a gate driver or level shifter, typically taking VGS to 10 V.
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Total gate charge (Qg) of 110 nC sets the drive current required: average gate current is roughly Qg × switching frequency, so faster switching needs a stronger driver.
Switching behaviour is characterised by a rise time of 56 ns and an output capacitance (Coss) of 450 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the IRF1310NS
A drop-in substitute for the IRF1310NS must be the same N-channel type and offer a drain–source rating of at least 100 V, a continuous drain current rating of at least 42 A, an on-resistance no higher than 0.036 Ω if efficiency and heat matter and a comparable gate threshold, so your existing gate drive still fully enhances the device.
Mechanically, check the replacement against the TO263 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the IRF1310NS?
The IRF1310NS is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 100 V drain-source and 42 A continuous drain current.
What is the maximum voltage of the IRF1310NS?
The IRF1310NS has a maximum drain-source voltage (Vds) of 100 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the IRF1310NS handle?
It is rated for 42 A of continuous drain current, with power dissipation limited to 160 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the IRF1310NS?
On-resistance (Rds(on)) is 0.036 Ω. Multiply by the square of your load current to estimate conduction loss.
Is the IRF1310NS logic-level compatible?
No. The gate threshold is 4 V, so a 3.3 V or 5 V logic output cannot fully turn it on. Use a gate driver and take Vgs to around 10 V.
What package does the IRF1310NS come in?
It is listed in TO263. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the IRF1310NS?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 100 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Gate Threshold Voltage (Vgsth) | 4 V |
| Drain Current (Id) | 42 A |
| Drain-Source On-Resistance (Rds) | 0.036 |
| Total Gate Charge (Qg) | 110 |
| Rise Time (tr) | 56 nS |
| Output Capacitance (Coss) | 450 pF |
| Junction Temperature (Tj) | 175 °C |
| Package | TO263 |
| Power Dissipation (Pd) | 160 W |
Equivalent & Replacement Parts
No verified equivalents are listed for IRF1310NS yet.