IRF1018ES MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF1018ES

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)60 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)79 A
Drain-Source On-Resistance (Rds)0.0084
Rise Time (tr)35 nS
Output Capacitance (Coss)270 pF
Junction Temperature (Tj)175 °C
PackageTO263
Power Dissipation (Pd)110 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF1018ES yet.

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