IRF1018E MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by International Rectifier (now Infineon)
About the IRF1018E
The IRF1018E is an N-channel MOSFET with a drain–source voltage (VDS) rating of 60 V, a continuous drain current (ID) of 79 A and an on-resistance (RDS(on)) of 0.0084 Ω. It can dissipate up to 110 W and is rated to a junction temperature of 175 °C. It is supplied in the TO220AB package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 60 V
- Max continuous drain current (ID): 79 A
- On-resistance (RDS(on)): 0.0084 Ω
- Power dissipation (PD): 110 W
- Max junction temperature (TJ): 175 °C
- Package: TO220AB
- Manufacturer: Commonly produced by International Rectifier (now Infineon)
Typical applications
With its 60 V drain–source rating the IRF1018E sits in the mid-range class of switching MOSFETs, typically found in 24 V and 48 V industrial and battery systems, motor drives and H-bridges and load and hot-swap switching.
The 79 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
The low 0.0084 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 35 ns and an output capacitance (Coss) of 270 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the IRF1018E
A drop-in substitute for the IRF1018E must be the same N-channel type and offer a drain–source rating of at least 60 V, a continuous drain current rating of at least 79 A and an on-resistance no higher than 0.0084 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO220AB footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the IRF1018E?
The IRF1018E is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 60 V drain-source and 79 A continuous drain current.
What is the maximum voltage of the IRF1018E?
The IRF1018E has a maximum drain-source voltage (Vds) of 60 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the IRF1018E handle?
It is rated for 79 A of continuous drain current, with power dissipation limited to 110 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the IRF1018E?
On-resistance (Rds(on)) is 0.0084 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the IRF1018E come in?
It is listed in TO220AB. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the IRF1018E?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 60 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 79 A |
| Drain-Source On-Resistance (Rds) | 0.0084 |
| Rise Time (tr) | 35 nS |
| Output Capacitance (Coss) | 270 pF |
| Junction Temperature (Tj) | 175 °C |
| Package | TO220AB |
| Power Dissipation (Pd) | 110 W |
Equivalent & Replacement Parts
No verified equivalents are listed for IRF1018E yet.