IRF1010N MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF1010N

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)55 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)85 A
Drain-Source On-Resistance (Rds)0.011
Rise Time (tr)76 nS
Output Capacitance (Coss)690 pF
Junction Temperature (Tj)175 °C
PackageTO220AB
Power Dissipation (Pd)180 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF1010N yet.

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