Question 1

What is IRF1010ES?

Accepted Answer

MOSFET N -Channel - IRF1010ES

Question 2

What are the specifications of IRF1010ES?

Accepted Answer

Key specifications include: Type: MOSFET, Channel Type: N -Channel, Drain-Source Voltage (Vds): 60 V, Gate-Source Voltage (Vgs): 20 V, Drain Current (Id): 84 A, Drain-Source On-Resistance (Rds): 0.012, Rise Time (tr): 78 nS, Output Capacitance (Coss): 690 pF, Junction Temperature (Tj): 175 °C, Package: TO263, Power Dissipation (Pd): 200 W

Question 3

What are equivalent components to IRF1010ES?

Accepted Answer

See the component details for equivalent parts.

IRF1010ES MOSFET — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Type	MOSFET
Channel Type	N -Channel
Drain-Source Voltage (Vds)	60 V
Gate-Source Voltage (Vgs)	20 V
Drain Current (Id)	84 A
Drain-Source On-Resistance (Rds)	0.012
Rise Time (tr)	78 nS
Output Capacitance (Coss)	690 pF
Junction Temperature (Tj)	175 °C
Package	TO263
Power Dissipation (Pd)	200 W