IRCZ445 MOSFET — Specifications & Equivalents

About the IRCZ445

The IRCZ445 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 60 V, a continuous drain current (ID) of 50 A and an on-resistance (RDS(on)) of 0.028 Ω. It can dissipate up to 150 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220 package.

At a glance

  • Type: N-channel MOSFET
  • Max drain–source voltage (VDS): 60 V
  • Max continuous drain current (ID): 50 A
  • On-resistance (RDS(on)): 0.028 Ω
  • Power dissipation (PD): 150 W
  • Max junction temperature (TJ): 150 °C
  • Package: TO220

Typical applications

With its 60 V drain–source rating the IRCZ445 sits in the mid-range class of switching MOSFETs, typically found in 24 V and 48 V industrial and battery systems, motor drives and H-bridges and load and hot-swap switching.

The 50 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.

The low 0.028 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.

Gate drive and switching notes

Keep gate–source voltage within the ±10 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Choosing a replacement for the IRCZ445

A drop-in substitute for the IRCZ445 must be the same N-channel type and offer a drain–source rating of at least 60 V, a continuous drain current rating of at least 50 A and an on-resistance no higher than 0.028 Ω if efficiency and heat matter.

Mechanically, check the replacement against the TO220 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the IRCZ445?

The IRCZ445 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 60 V drain-source and 50 A continuous drain current.

What is the maximum voltage of the IRCZ445?

The IRCZ445 has a maximum drain-source voltage (Vds) of 60 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the IRCZ445 handle?

It is rated for 50 A of continuous drain current, with power dissipation limited to 150 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the IRCZ445?

On-resistance (Rds(on)) is 0.028 Ω. Multiply by the square of your load current to estimate conduction loss.

What package does the IRCZ445 come in?

It is listed in TO220. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the IRCZ445?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)60 V
Gate-Source Voltage (Vgs)10 V
Drain Current (Id)50 A
Drain-Source On-Resistance (Rds)0.028
Junction Temperature (Tj)150 °C
PackageTO220
Power Dissipation (Pd)150 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRCZ445 yet.

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