HN1K04FU MOSFET — Specifications & Equivalents
About the HN1K04FU
The HN1K04FU is an N-channel MOSFET with a drain–source voltage (VDS) rating of 50 V, a continuous drain current (ID) of 0.05 A and an on-resistance (RDS(on)) of 50 Ω. It can dissipate up to 0.2 W and is rated to a junction temperature of 150 °C. It is available in SOT363, SC88 and US6 packages, so confirm the pinout of the exact variant you order.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 50 V
- Max continuous drain current (ID): 0.05 A
- On-resistance (RDS(on)): 50 Ω
- Power dissipation (PD): 0.2 W
- Max junction temperature (TJ): 150 °C
- Package: SOT363, SC88, US6
Typical applications
With its 50 V drain–source rating the HN1K04FU sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.
At 0.05 A it is aimed at small-signal and light-load switching rather than power conversion.
On-resistance of 50 Ω is relatively high, so this part is better suited to low duty-cycle or low-current switching than to continuous high-current conduction.
Gate drive and switching notes
Keep gate–source voltage within the ±10 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 5.7 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the HN1K04FU
A drop-in substitute for the HN1K04FU must be the same N-channel type and offer a drain–source rating of at least 50 V, a continuous drain current rating of at least 0.05 A and an on-resistance no higher than 50 Ω if efficiency and heat matter.
Mechanically, check the replacement against the SOT363, SC88 and US6 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the HN1K04FU?
The HN1K04FU is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 50 V drain-source and 0.05 A continuous drain current.
What is the maximum voltage of the HN1K04FU?
The HN1K04FU has a maximum drain-source voltage (Vds) of 50 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the HN1K04FU handle?
It is rated for 0.05 A of continuous drain current, with power dissipation limited to 0.2 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the HN1K04FU?
On-resistance (Rds(on)) is 50 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the HN1K04FU come in?
It is listed in SOT363, SC88 and US6. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the HN1K04FU?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 50 V |
| Gate-Source Voltage (Vgs) | 10 V |
| Drain Current (Id) | 0.05 A |
| Drain-Source On-Resistance (Rds) | 50 |
| Output Capacitance (Coss) | 5.7 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | SOT363 SC88 US6 |
| Power Dissipation (Pd) | 0.2 W |
Equivalent & Replacement Parts
No verified equivalents are listed for HN1K04FU yet.