FDB6035AL MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by Fairchild (now onsemi)
About the FDB6035AL
The FDB6035AL is an N-channel MOSFET with a drain–source voltage (VDS) rating of 30 V, a continuous drain current (ID) of 48 A and an on-resistance (RDS(on)) of 0.012 Ω. It can dissipate up to 52 W and is rated to a junction temperature of 175 °C. It is supplied in the TO263AB package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 30 V
- Max continuous drain current (ID): 48 A
- On-resistance (RDS(on)): 0.012 Ω
- Power dissipation (PD): 52 W
- Max junction temperature (TJ): 175 °C
- Package: TO263AB
- Manufacturer: Commonly produced by Fairchild (now onsemi)
Typical applications
With its 30 V drain–source rating the FDB6035AL sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.
The low 0.012 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 12 ns and an output capacitance (Coss) of 330 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the FDB6035AL
A drop-in substitute for the FDB6035AL must be the same N-channel type and offer a drain–source rating of at least 30 V, a continuous drain current rating of at least 48 A and an on-resistance no higher than 0.012 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO263AB footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the FDB6035AL?
The FDB6035AL is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 48 A continuous drain current.
What is the maximum voltage of the FDB6035AL?
The FDB6035AL has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the FDB6035AL handle?
It is rated for 48 A of continuous drain current, with power dissipation limited to 52 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the FDB6035AL?
On-resistance (Rds(on)) is 0.012 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the FDB6035AL come in?
It is listed in TO263AB. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the FDB6035AL?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 30 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 48 A |
| Drain-Source On-Resistance (Rds) | 0.012 |
| Rise Time (tr) | 12 nS |
| Output Capacitance (Coss) | 330 pF |
| Junction Temperature (Tj) | 175 °C |
| Package | TO263AB |
| Power Dissipation (Pd) | 52 W |
Equivalent & Replacement Parts
No verified equivalents are listed for FDB6035AL yet.