FDB3632F085 MOSFET — Specifications & Equivalents

MOSFET N -Channel - FDB3632F085

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)100 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)80 A
Drain-Source On-Resistance (Rds)0.009
Rise Time (tr)39 nS
Output Capacitance (Coss)820 pF
Junction Temperature (Tj)175 °C
PackageTO263 D2PAK
Power Dissipation (Pd)310 W

Equivalent & Replacement Parts

No verified equivalents are listed for FDB3632F085 yet.

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