FDAF59N30 MOSFET — Specifications & Equivalents

MOSFET N -Channel - FDAF59N30

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)300 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)34 A
Drain-Source On-Resistance (Rds)0.056
Rise Time (tr)575 nS
Output Capacitance (Coss)710 pF
Junction Temperature (Tj)150 °C
PackageTO-3PF
Power Dissipation (Pd)161 W

Equivalent & Replacement Parts

No verified equivalents are listed for FDAF59N30 yet.

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