FDAF59N30 MOSFET — Specifications & Equivalents
MOSFET N -Channel - FDAF59N30
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 300 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 34 A |
| Drain-Source On-Resistance (Rds) | 0.056 |
| Rise Time (tr) | 575 nS |
| Output Capacitance (Coss) | 710 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO-3PF |
| Power Dissipation (Pd) | 161 W |
Equivalent & Replacement Parts
No verified equivalents are listed for FDAF59N30 yet.