FDA69N25 MOSFET — Specifications & Equivalents
About the FDA69N25
The FDA69N25 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 250 V, a continuous drain current (ID) of 69 A and an on-resistance (RDS(on)) of 0.041 Ω. It can dissipate up to 480 W and is rated to a junction temperature of 150 °C. It is supplied in the TO3PN package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 250 V
- Max continuous drain current (ID): 69 A
- On-resistance (RDS(on)): 0.041 Ω
- Power dissipation (PD): 480 W
- Max junction temperature (TJ): 150 °C
- Package: TO3PN
Typical applications
With its 250 V drain–source rating the FDA69N25 sits in the medium-high-voltage class of switching MOSFETs, typically found in telecom and industrial DC rails, boost and flyback converters, LED and backlight drivers and power-factor-correction stages. Common where the bus sits well above 100 V but below rectified mains.
The 69 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
The low 0.041 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Choosing a replacement for the FDA69N25
A drop-in substitute for the FDA69N25 must be the same N-channel type and offer a drain–source rating of at least 250 V, a continuous drain current rating of at least 69 A and an on-resistance no higher than 0.041 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO3PN footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the FDA69N25?
The FDA69N25 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 250 V drain-source and 69 A continuous drain current.
What is the maximum voltage of the FDA69N25?
The FDA69N25 has a maximum drain-source voltage (Vds) of 250 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the FDA69N25 handle?
It is rated for 69 A of continuous drain current, with power dissipation limited to 480 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the FDA69N25?
On-resistance (Rds(on)) is 0.041 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the FDA69N25 come in?
It is listed in TO3PN. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the FDA69N25?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 250 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 69 A |
| Drain-Source On-Resistance (Rds) | 0.041 |
| Junction Temperature (Tj) | 150 °C |
| Package | TO3PN |
| Power Dissipation (Pd) | 480 W |
Equivalent & Replacement Parts
No verified equivalents are listed for FDA69N25 yet.