FDA59N30 MOSFET — Specifications & Equivalents

MOSFET N -Channel - FDA59N30

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)300 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)59 A
Drain-Source On-Resistance (Rds)0.056
Junction Temperature (Tj)150 °C
PackageTO3PN
Power Dissipation (Pd)500 W

Equivalent & Replacement Parts

No verified equivalents are listed for FDA59N30 yet.

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