FCP650N80Z MOSFET — Specifications & Equivalents

MOSFET N -Channel - FCP650N80Z

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)800 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)10 A
Drain-Source On-Resistance (Rds)0.65
Rise Time (tr)11 nS
Output Capacitance (Coss)18 pF
Junction Temperature (Tj)150 °C
PackageTO-220
Power Dissipation (Pd)162 W

Equivalent & Replacement Parts

No verified equivalents are listed for FCP650N80Z yet.

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