FCP190N65S3 MOSFET — Specifications & Equivalents

MOSFET N -Channel - FCP190N65S3

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)650 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)17 A
Drain-Source On-Resistance (Rds)0.19
Rise Time (tr)22 nS
Output Capacitance (Coss)30 pF
Junction Temperature (Tj)150 °C
PackageTO220
Power Dissipation (Pd)144 W

Equivalent & Replacement Parts

No verified equivalents are listed for FCP190N65S3 yet.

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