FCP190N60GF102 MOSFET — Specifications & Equivalents

MOSFET N -Channel - FCP190N60GF102

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)600 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)20.2 A
Drain-Source On-Resistance (Rds)0.199
Rise Time (tr)10 nS
Output Capacitance (Coss)1630 pF
Junction Temperature (Tj)150 °C
PackageTO220
Power Dissipation (Pd)208 W

Equivalent & Replacement Parts

No verified equivalents are listed for FCP190N60GF102 yet.

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