FCI25N60N MOSFET — Specifications & Equivalents
About the FCI25N60N
The FCI25N60N is an N-channel MOSFET with a drain–source voltage (VDS) rating of 600 V, a continuous drain current (ID) of 25 A and an on-resistance (RDS(on)) of 0.125 Ω. It can dissipate up to 216 W and is rated to a junction temperature of 150 °C. It is available in TO262 and I2PAK packages, so confirm the pinout of the exact variant you order.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 600 V
- Max continuous drain current (ID): 25 A
- On-resistance (RDS(on)): 0.125 Ω
- Power dissipation (PD): 216 W
- Max junction temperature (TJ): 150 °C
- Package: TO262, I2PAK
Typical applications
With its 600 V drain–source rating the FCI25N60N sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Choosing a replacement for the FCI25N60N
A drop-in substitute for the FCI25N60N must be the same N-channel type and offer a drain–source rating of at least 600 V, a continuous drain current rating of at least 25 A and an on-resistance no higher than 0.125 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO262 and I2PAK footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the FCI25N60N?
The FCI25N60N is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 600 V drain-source and 25 A continuous drain current.
What is the maximum voltage of the FCI25N60N?
The FCI25N60N has a maximum drain-source voltage (Vds) of 600 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the FCI25N60N handle?
It is rated for 25 A of continuous drain current, with power dissipation limited to 216 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the FCI25N60N?
On-resistance (Rds(on)) is 0.125 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the FCI25N60N come in?
It is listed in TO262 and I2PAK. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the FCI25N60N?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 600 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 25 A |
| Drain-Source On-Resistance (Rds) | 0.125 |
| Junction Temperature (Tj) | 150 °C |
| Package | TO262 I2PAK |
| Power Dissipation (Pd) | 216 W |
Equivalent & Replacement Parts
No verified equivalents are listed for FCI25N60N yet.