FCB20N60FF085 MOSFET — Specifications & Equivalents
About the FCB20N60FF085
The FCB20N60FF085 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 600 V, a continuous drain current (ID) of 20 A and an on-resistance (RDS(on)) of 0.195 Ω. It can dissipate up to 405 W and is rated to a junction temperature of 150 °C. It is available in TO263 and D2PAK packages, so confirm the pinout of the exact variant you order.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 600 V
- Max continuous drain current (ID): 20 A
- On-resistance (RDS(on)): 0.195 Ω
- Power dissipation (PD): 405 W
- Max junction temperature (TJ): 150 °C
- Package: TO263, D2PAK
Typical applications
With its 600 V drain–source rating the FCB20N60FF085 sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 66 ns and an output capacitance (Coss) of 1310 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the FCB20N60FF085
A drop-in substitute for the FCB20N60FF085 must be the same N-channel type and offer a drain–source rating of at least 600 V, a continuous drain current rating of at least 20 A and an on-resistance no higher than 0.195 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO263 and D2PAK footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the FCB20N60FF085?
The FCB20N60FF085 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 600 V drain-source and 20 A continuous drain current.
What is the maximum voltage of the FCB20N60FF085?
The FCB20N60FF085 has a maximum drain-source voltage (Vds) of 600 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the FCB20N60FF085 handle?
It is rated for 20 A of continuous drain current, with power dissipation limited to 405 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the FCB20N60FF085?
On-resistance (Rds(on)) is 0.195 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the FCB20N60FF085 come in?
It is listed in TO263 and D2PAK. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the FCB20N60FF085?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 600 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 20 A |
| Drain-Source On-Resistance (Rds) | 0.195 |
| Rise Time (tr) | 66 nS |
| Output Capacitance (Coss) | 1310 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO263 D2PAK |
| Power Dissipation (Pd) | 405 W |
Equivalent & Replacement Parts
No verified equivalents are listed for FCB20N60FF085 yet.