FCB099N65S3 MOSFET — Specifications & Equivalents

MOSFET N -Channel - FCB099N65S3

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)650 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)30 A
Drain-Source On-Resistance (Rds)0.099
Rise Time (tr)24 nS
Output Capacitance (Coss)55 pF
Junction Temperature (Tj)150 °C
PackageTO263
Power Dissipation (Pd)227 W

Equivalent & Replacement Parts

No verified equivalents are listed for FCB099N65S3 yet.

Browse all electronic components