FC6B22220L MOSFET — Specifications & Equivalents

About the FC6B22220L

The FC6B22220L is an N-channel MOSFET with a drain–source voltage (VDS) rating of 24 V, a continuous drain current (ID) of 13 A and an on-resistance (RDS(on)) of 0.0112 Ω. It can dissipate up to 2.1 W and is rated to a junction temperature of 150 °C. It is supplied in the MLGA006 package.

At a glance

  • Type: N-channel MOSFET
  • Max drain–source voltage (VDS): 24 V
  • Max continuous drain current (ID): 13 A
  • On-resistance (RDS(on)): 0.0112 Ω
  • Power dissipation (PD): 2.1 W
  • Max junction temperature (TJ): 150 °C
  • Package: MLGA006

Typical applications

With its 24 V drain–source rating the FC6B22220L sits in the very-low-voltage class of switching MOSFETs, typically found in battery protection and power-path switching, point-of-load converters and logic-level load switching in portable devices.

The low 0.0112 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.

Gate drive and switching notes

Keep gate–source voltage within the ±12 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by a rise time of 1800 ns and an output capacitance (Coss) of 250 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the FC6B22220L

A drop-in substitute for the FC6B22220L must be the same N-channel type and offer a drain–source rating of at least 24 V, a continuous drain current rating of at least 13 A and an on-resistance no higher than 0.0112 Ω if efficiency and heat matter.

Mechanically, check the replacement against the MLGA006 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the FC6B22220L?

The FC6B22220L is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 24 V drain-source and 13 A continuous drain current.

What is the maximum voltage of the FC6B22220L?

The FC6B22220L has a maximum drain-source voltage (Vds) of 24 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the FC6B22220L handle?

It is rated for 13 A of continuous drain current, with power dissipation limited to 2.1 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the FC6B22220L?

On-resistance (Rds(on)) is 0.0112 Ω. Multiply by the square of your load current to estimate conduction loss.

What package does the FC6B22220L come in?

It is listed in MLGA006. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the FC6B22220L?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)24 V
Gate-Source Voltage (Vgs)12 V
Drain Current (Id)13 A
Drain-Source On-Resistance (Rds)0.0112
Rise Time (tr)1800 nS
Output Capacitance (Coss)250 pF
Junction Temperature (Tj)150 °C
PackageMLGA006
Power Dissipation (Pd)2.1 W

Equivalent & Replacement Parts

No verified equivalents are listed for FC6B22220L yet.

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