F8N65 MOSFET — Specifications & Equivalents

MOSFET N -Channel - F8N65

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)650 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)8 A
Drain-Source On-Resistance (Rds)1.4
Rise Time (tr)21 nS
Output Capacitance (Coss)95 pF
Junction Temperature (Tj)150 °C
PackageTO220F
Power Dissipation (Pd)35 W

Equivalent & Replacement Parts

No verified equivalents are listed for F8N65 yet.

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