F60W60CP MOSFET — Specifications & Equivalents

About the F60W60CP

The F60W60CP is an N-channel MOSFET with a drain–source voltage (V_DS) rating of 600 V, a continuous drain current (I_D) of 60 A and an on-resistance (R_DS(on)) of 0.045 Ω. It can dissipate up to 140 W and is rated to a junction temperature of 150 °C. It is supplied in the TO-3P package.

At a glance

• Type: N-channel MOSFET
• Max drain–source voltage (V_DS): 600 V
• Max continuous drain current (I_D): 60 A
• On-resistance (R_DS(on)): 0.045 Ω
• Power dissipation (P_D): 140 W
• Max junction temperature (T_J): 150 °C
• Package: TO-3P

Typical applications

With its 600 V drain–source rating the F60W60CP sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.

The 60 A current rating puts it in high-current territory, where conduction loss (I² × R_DS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.

The low 0.045 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.

Gate drive and switching notes

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by a rise time of 165 ns and an output capacitance (C_oss) of 320 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the F60W60CP

A drop-in substitute for the F60W60CP must be the same N-channel type and offer a drain–source rating of at least 600 V, a continuous drain current rating of at least 60 A and an on-resistance no higher than 0.045 Ω if efficiency and heat matter.

Mechanically, check the replacement against the TO-3P footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the F60W60CP?

The F60W60CP is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 600 V drain-source and 60 A continuous drain current.

What is the maximum voltage of the F60W60CP?

The F60W60CP has a maximum drain-source voltage (Vds) of 600 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the F60W60CP handle?

It is rated for 60 A of continuous drain current, with power dissipation limited to 140 W. Real-world capability depends on your heatsinking and ambient temperature.

What is the on-resistance of the F60W60CP?

On-resistance (Rds(on)) is 0.045 Ω. Multiply by the square of your load current to estimate conduction loss.

What package does the F60W60CP come in?

It is listed in TO-3P. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the F60W60CP?

No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.