F4N65 MOSFET — Specifications & Equivalents

MOSFET N -Channel - F4N65

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)650 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)4 A
Drain-Source On-Resistance (Rds)2.5
Rise Time (tr)8.8 nS
Output Capacitance (Coss)55 pF
Junction Temperature (Tj)150 °C
PackageTO220F
Power Dissipation (Pd)30 W

Equivalent & Replacement Parts

No verified equivalents are listed for F4N65 yet.

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