F3L15MR12W2M1B69 MOSFET — Specifications & Equivalents
About the F3L15MR12W2M1B69
The F3L15MR12W2M1B69 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 1200 V, a continuous drain current (ID) of 75 A and an on-resistance (RDS(on)) of 0.015 Ω. It is rated to a junction temperature of 150 °C. It is supplied in the MODULE package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 1200 V
- Max continuous drain current (ID): 75 A
- On-resistance (RDS(on)): 0.015 Ω
- Max junction temperature (TJ): 150 °C
- Package: MODULE
Typical applications
With its 1200 V drain–source rating the F3L15MR12W2M1B69 sits in the ultra-high-voltage class of switching MOSFETs, typically found in industrial ignition and igniter circuits, high-voltage pulse generators and electrostatic and CRT deflection stages. Ratings at this level demand careful creepage/clearance and insulation design on the PCB.
The 75 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
The low 0.015 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 13 ns and an output capacitance (Coss) of 330 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the F3L15MR12W2M1B69
A drop-in substitute for the F3L15MR12W2M1B69 must be the same N-channel type and offer a drain–source rating of at least 1200 V, a continuous drain current rating of at least 75 A and an on-resistance no higher than 0.015 Ω if efficiency and heat matter.
Mechanically, check the replacement against the MODULE footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the F3L15MR12W2M1B69?
The F3L15MR12W2M1B69 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 1200 V drain-source and 75 A continuous drain current.
What is the maximum voltage of the F3L15MR12W2M1B69?
The F3L15MR12W2M1B69 has a maximum drain-source voltage (Vds) of 1200 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the F3L15MR12W2M1B69 handle?
It is rated for 75 A of continuous drain current. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the F3L15MR12W2M1B69?
On-resistance (Rds(on)) is 0.015 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the F3L15MR12W2M1B69 come in?
It is listed in MODULE. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the F3L15MR12W2M1B69?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 1200 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 75 A |
| Drain-Source On-Resistance (Rds) | 0.015 |
| Rise Time (tr) | 13 nS |
| Output Capacitance (Coss) | 330 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | MODULE |
Equivalent & Replacement Parts
No verified equivalents are listed for F3L15MR12W2M1B69 yet.