F25N10 MOSFET — Specifications & Equivalents
About the F25N10
The F25N10 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 100 V, a continuous drain current (ID) of 30 A and an on-resistance (RDS(on)) of 0.036 Ω. It can dissipate up to 35 W and is rated to a junction temperature of 175 °C. It is supplied in the TO220F package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 100 V
- Max continuous drain current (ID): 30 A
- On-resistance (RDS(on)): 0.036 Ω
- Power dissipation (PD): 35 W
- Max junction temperature (TJ): 175 °C
- Package: TO220F
Typical applications
With its 100 V drain–source rating the F25N10 sits in the medium-voltage class of switching MOSFETs, typically found in 48 V and 96 V distribution systems, solar and telecom power stages, DC motor drives and intermediate-bus DC-DC converters.
The low 0.036 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 26 ns and an output capacitance (Coss) of 107 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the F25N10
A drop-in substitute for the F25N10 must be the same N-channel type and offer a drain–source rating of at least 100 V, a continuous drain current rating of at least 30 A and an on-resistance no higher than 0.036 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO220F footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the F25N10?
The F25N10 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 100 V drain-source and 30 A continuous drain current.
What is the maximum voltage of the F25N10?
The F25N10 has a maximum drain-source voltage (Vds) of 100 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the F25N10 handle?
It is rated for 30 A of continuous drain current, with power dissipation limited to 35 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the F25N10?
On-resistance (Rds(on)) is 0.036 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the F25N10 come in?
It is listed in TO220F. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the F25N10?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 100 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 30 A |
| Drain-Source On-Resistance (Rds) | 0.036 |
| Rise Time (tr) | 26 nS |
| Output Capacitance (Coss) | 107 pF |
| Junction Temperature (Tj) | 175 °C |
| Package | TO220F |
| Power Dissipation (Pd) | 35 W |
Equivalent & Replacement Parts
No verified equivalents are listed for F25N10 yet.