F11S80C3 MOSFET — Specifications & Equivalents

MOSFET N -Channel - F11S80C3

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)800 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)11 A
Drain-Source On-Resistance (Rds)0.45
Rise Time (tr)30 nS
Output Capacitance (Coss)740 pF
Junction Temperature (Tj)150 °C
PackageSTO-220
Power Dissipation (Pd)50 W

Equivalent & Replacement Parts

No verified equivalents are listed for F11S80C3 yet.

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