F10W90HVX2 MOSFET — Specifications & Equivalents
About the F10W90HVX2
The F10W90HVX2 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 900 V, a continuous drain current (ID) of 10 A and an on-resistance (RDS(on)) of 1.4 Ω. It can dissipate up to 120 W and is rated to a junction temperature of 150 °C. It is supplied in the TO-3P package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 900 V
- Max continuous drain current (ID): 10 A
- On-resistance (RDS(on)): 1.4 Ω
- Power dissipation (PD): 120 W
- Max junction temperature (TJ): 150 °C
- Package: TO-3P
Typical applications
With its 900 V drain–source rating the F10W90HVX2 sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
On-resistance of 1.4 Ω is relatively high, so this part is better suited to low duty-cycle or low-current switching than to continuous high-current conduction.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 210 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the F10W90HVX2
A drop-in substitute for the F10W90HVX2 must be the same N-channel type and offer a drain–source rating of at least 900 V, a continuous drain current rating of at least 10 A and an on-resistance no higher than 1.4 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO-3P footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the F10W90HVX2?
The F10W90HVX2 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 900 V drain-source and 10 A continuous drain current.
What is the maximum voltage of the F10W90HVX2?
The F10W90HVX2 has a maximum drain-source voltage (Vds) of 900 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the F10W90HVX2 handle?
It is rated for 10 A of continuous drain current, with power dissipation limited to 120 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the F10W90HVX2?
On-resistance (Rds(on)) is 1.4 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the F10W90HVX2 come in?
It is listed in TO-3P. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the F10W90HVX2?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 900 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 10 A |
| Drain-Source On-Resistance (Rds) | 1.4 |
| Output Capacitance (Coss) | 210 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO-3P |
| Power Dissipation (Pd) | 120 W |
Equivalent & Replacement Parts
No verified equivalents are listed for F10W90HVX2 yet.