F10N50 MOSFET — Specifications & Equivalents

MOSFET N -Channel - F10N50

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)500 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)10 A
Drain-Source On-Resistance (Rds)0.75
Rise Time (tr)20 nS
Output Capacitance (Coss)128 pF
Junction Temperature (Tj)150 °C
PackageTO220F
Power Dissipation (Pd)40 W

Equivalent & Replacement Parts

No verified equivalents are listed for F10N50 yet.

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