ET6310 MOSFET — Specifications & Equivalents

MOSFET N -Channel - ET6310

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)30 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)85 A
Drain-Source On-Resistance (Rds)0.0022
Rise Time (tr)5.2 nS
Output Capacitance (Coss)1320 pF
Junction Temperature (Tj)150 °C
PackagePDFN5X6-EP1
Power Dissipation (Pd)80 W

Equivalent & Replacement Parts

No verified equivalents are listed for ET6310 yet.

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