ET6310 MOSFET — Specifications & Equivalents
About the ET6310
The ET6310 is an N-channel MOSFET with a drain–source voltage (VDS) rating of 30 V, a continuous drain current (ID) of 85 A and an on-resistance (RDS(on)) of 0.0022 Ω. It can dissipate up to 80 W and is rated to a junction temperature of 150 °C. It is supplied in the PDFN5X6-EP1 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 30 V
- Max continuous drain current (ID): 85 A
- On-resistance (RDS(on)): 0.0022 Ω
- Power dissipation (PD): 80 W
- Max junction temperature (TJ): 150 °C
- Package: PDFN5X6-EP1
Typical applications
With its 30 V drain–source rating the ET6310 sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.
The 85 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
The low 0.0022 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 5.2 ns and an output capacitance (Coss) of 1320 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the ET6310
A drop-in substitute for the ET6310 must be the same N-channel type and offer a drain–source rating of at least 30 V, a continuous drain current rating of at least 85 A and an on-resistance no higher than 0.0022 Ω if efficiency and heat matter.
Mechanically, check the replacement against the PDFN5X6-EP1 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the ET6310?
The ET6310 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 85 A continuous drain current.
What is the maximum voltage of the ET6310?
The ET6310 has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the ET6310 handle?
It is rated for 85 A of continuous drain current, with power dissipation limited to 80 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the ET6310?
On-resistance (Rds(on)) is 0.0022 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the ET6310 come in?
It is listed in PDFN5X6-EP1. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the ET6310?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 30 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 85 A |
| Drain-Source On-Resistance (Rds) | 0.0022 |
| Rise Time (tr) | 5.2 nS |
| Output Capacitance (Coss) | 1320 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | PDFN5X6-EP1 |
| Power Dissipation (Pd) | 80 W |
Equivalent & Replacement Parts
No verified equivalents are listed for ET6310 yet.