ET6309 MOSFET — Specifications & Equivalents

MOSFET N -Channel - ET6309

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)30 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)100 A
Drain-Source On-Resistance (Rds)0.004
Rise Time (tr)18 nS
Output Capacitance (Coss)405 pF
Junction Temperature (Tj)150 °C
PackagePRPAK5X6-8L
Power Dissipation (Pd)40 W

Equivalent & Replacement Parts

No verified equivalents are listed for ET6309 yet.

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