ET4435 MOSFET — Specifications & Equivalents

MOSFET P -Channel - ET4435

Key Specifications

TypeMOSFET
Channel TypeP -Channel
Drain-Source Voltage (Vds)30 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)9.1 A
Drain-Source On-Resistance (Rds)0.035
Rise Time (tr)15 nS
Output Capacitance (Coss)350 pF
Junction Temperature (Tj)150 °C
PackageSOP8
Power Dissipation (Pd)3.1 W

Equivalent & Replacement Parts

No verified equivalents are listed for ET4435 yet.

Browse all electronic components