ET2316 MOSFET — Specifications & Equivalents

MOSFET N -Channel - ET2316

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)20 V
Gate-Source Voltage (Vgs)12 V
Drain Current (Id)8 A
Drain-Source On-Resistance (Rds)0.013
Rise Time (tr)2.8 nS
Output Capacitance (Coss)170 pF
Junction Temperature (Tj)150 °C
PackageSOT23
Power Dissipation (Pd)1.25 W

Equivalent & Replacement Parts

No verified equivalents are listed for ET2316 yet.

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