EMA09N03AN MOSFET — Specifications & Equivalents
About the EMA09N03AN
The EMA09N03AN is an N-channel MOSFET with a drain–source voltage (VDS) rating of 25 V, a continuous drain current (ID) of 50 A and an on-resistance (RDS(on)) of 0.009 Ω. It can dissipate up to 50 W and is rated to a junction temperature of 150 °C. It is supplied in the TO252 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 25 V
- Max continuous drain current (ID): 50 A
- On-resistance (RDS(on)): 0.009 Ω
- Power dissipation (PD): 50 W
- Max junction temperature (TJ): 150 °C
- Package: TO252
Typical applications
With its 25 V drain–source rating the EMA09N03AN sits in the very-low-voltage class of switching MOSFETs, typically found in battery protection and power-path switching, point-of-load converters and logic-level load switching in portable devices.
The 50 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
The low 0.009 Ω on-resistance keeps conduction loss down, which suits synchronous rectification and continuous high-current paths.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 8 ns and an output capacitance (Coss) of 270 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the EMA09N03AN
A drop-in substitute for the EMA09N03AN must be the same N-channel type and offer a drain–source rating of at least 25 V, a continuous drain current rating of at least 50 A and an on-resistance no higher than 0.009 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO252 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the EMA09N03AN?
The EMA09N03AN is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 25 V drain-source and 50 A continuous drain current.
What is the maximum voltage of the EMA09N03AN?
The EMA09N03AN has a maximum drain-source voltage (Vds) of 25 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the EMA09N03AN handle?
It is rated for 50 A of continuous drain current, with power dissipation limited to 50 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the EMA09N03AN?
On-resistance (Rds(on)) is 0.009 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the EMA09N03AN come in?
It is listed in TO252. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the EMA09N03AN?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 25 V |
| Gate-Source Voltage (Vgs) | 20 V |
| Drain Current (Id) | 50 A |
| Drain-Source On-Resistance (Rds) | 0.009 |
| Rise Time (tr) | 8 nS |
| Output Capacitance (Coss) | 270 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO252 |
| Power Dissipation (Pd) | 50 W |
Equivalent & Replacement Parts
No verified equivalents are listed for EMA09N03AN yet.